PSS8550D datasheet(6/10 Pages) PHILIPS

6 / 10 page

2004 Aug 10

Philips Semiconductors

Product speciﬁcation

PNP medium power 25 V transistor

PSS8550

handbook, halfpage

400

100

200

300

MLD964

−10−1

−1

IC (mA)

hFE

−10

−102

−103

−104

(1)

(2)

(3)

Fig.8

DC current gain as a function of collector

current; typical values.

PSS8550D VCE = −1V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLD965

−10−1

−1

−10

IC (mA)

VBE

(mV)

−103

−102

−104

(1)

(2)

(3)

Fig.9

Base-emitter voltage as a function of

collector current; typical values.

PSS8550D VCE = −1V.

(1) Tamb = −55 °C.

(2) Tamb =25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−10−1

−1

−10

−102

−103

− 104

−10

−102

−103

MLD966

IC (mA)

VCEsat

(mV)

(1)

(3)

(2)

Fig.10 Collector-emitter saturation voltage as a

function of collector current; typical values.

PSS8550D IC/IB = 10.

(1) Tamb = −55 °C.

(2) Tamb =25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLD968

−10−1

−1

−10

IC (mA)

VBEsat

(mV)

−103

−102

−104

(1)

(2)

(3)

Fig.11 Base-emitter saturation voltage as a

function of collector current; typical values.

PSS8550D IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

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