IXFN36N100 datasheet(1/4 Pages) IXYS

Nome de Peças	IXFN36N100

Descrição Electrónicos	HiPerFET Power MOSFETs Single Die MOSFET

PDF	4 Pages

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Fabricante Electrônico	IXYS [IXYS Corporation]

Página de início	http://www.ixys.com

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1 / 4 page

Features

• Internationalstandardpackages

• miniBLOC, withAluminiumnitride

isolation

• Low R

DS (on) HDMOS

TM process

• Ruggedpolysilicongatecellstructure

• UnclampedInductiveSwitching(UIS)

rated

• Lowpackageinductance

• FastintrinsicRectifier

Applications

• DC-DC converters

• Batterychargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperatureandlightingcontrols

Advantages

• Easy to mount

• Space savings

• High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

D = 3 mA

1000

V

GH(th)

V

DS = VGS, ID = 8 mA

2.5

5.0

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±200

nA

I

DSS

V

DS

= V

DSS

T

J =

25

°C

100

µA

V

GS

= 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS

= 10 V, I

D = 0.5

I

D25

0.24

Ω

Pulse test, t

≤ 300 µs,

duty cycle d

≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

1000

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C, Chip capability36

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

144

A

I

AR

T

C

= 25

°C36

A

E

AR

T

C

= 25

°C64

mJ

E

AS

T

C

= 25

°C4

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

700

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13 Nm/lb.in.

Terminal connection torque

1.5/13 Nm/lb.in.

Weight

30

g

HiPerFETTM

Power MOSFETs

Single Die MOSFET

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

98520C (02/01)

D

S

G

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

TAB = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

IXFN 36N100

V

DSS

= 1000V

I

D25

=

36A

R

DS(on)

= 0.24

Ω

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