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2SD2633 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças 2SD2633
Descrição Electrónicos  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD2633 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  2SD2633 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SD2633 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SD2633
DESCRIPTION
·
High DC Current Gain-
: hFE = 2000(Min)@ IC= 6A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·
Low Collector-Emitter Saturation Voltage-
: VCE(sat) =1.5V(Max)@ IC= 6A
APPLICATIONS
·
Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
IB
Base Current
1
A
PC
Collector Power Dissipation
TC=25℃
35
W
Collector Power Dissipation
Ta=25℃
2
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃


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