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IRFZ24N Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRFZ24N Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRFZ24N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 55 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 10A 0.07 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ± 100 nA IDSS Zero Gate Voltage Drain Current VDS= 55V; VGS= 0 VDS= 44V; VGS= 0; Tj= 150℃ 25 250 μ A VSD Forward On-Voltage IS= 10A; VGS= 0 1.3 V · |
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