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MBR2550CT Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR2550CT Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBR2550CT FEATURES · Low power loss, high efficiency. · High surge capacity. MECHANICAL CHARACTERISTICS · in low voltage, high frequency inverters, free wheeling, and polarity protection applications. · Metal silicon junction, majority carrier conduction. · High current capacity, low forward voltage drop. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM DC Blocking Voltage 50 V IF(AV) Average Rectified Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130°C 30 A IFSM Nonrepetitive Peak Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 150 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -50~175 ℃ |
Nº de peça semelhante - MBR2550CT |
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Descrição semelhante - MBR2550CT |
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