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LM4666 Folha de dados(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Nome de Peças LM4666
Descrição Electrónicos  Filterless High Efficiency Stereo 1.2W Switching Audio Amplifier
PDF  15 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  NSC [National Semiconductor (TI)]
Página de início  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM4666 Folha de dados(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (Note1)
6.0V
Storage Temperature
−65˚C to +150˚C
Voltage at Any Input Pin
V
DD + 0.3V
≥ V ≥ GND - 0.3V
Power Dissipation (Note 3)
Internally Limited
ESD Susceptibility,
pins 4, 7, 11, 14 (Note 4)
1kV
ESD Susceptibility,
all other pins (Note 4)
2.0kV
ESD Susceptibility (Note 5)
200V
Junction Temperature (T
J)
150˚C
Thermal Resistance
θ
JA (SDA)
63˚C/W
θ
JC (SDA)
12˚C/W
Soldering Information
See AN-1112 "microSMD Wafers Level Chip Scale
Package."
Operating Ratings (Notes 1, 2)
Temperature Range
T
MIN
≤ T
A
≤ T
MAX
−40˚C
≤ T
A
≤ 85˚C
Supply Voltage
2.8V
≤ V
DD
≤ 5.5V
Electrical Characteristics V
DD =5V
(Notes 1, 2)
The following specifications apply for V
DD = 5V and RL =15µH+8
Ω + 15µH unless otherwise specified. Limits apply for T
A =
25˚C.
Symbol
Parameter
Conditions
LM4666
Units
(Limits)
Typical
Limit
(Note 6)
(Notes 7, 8)
I
DD
Quiescent Power Supply Current
V
IN = 0V, No Load
V
IN = 0V, RL =15µH+8
Ω + 15µH
15
16
mA
mA
I
SD
Shutdown Current
V
SD = GND (Note 9)
0.02
µA
V
SDIH
Shutdown Voltage Input High
1.2
V
V
SDIL
Shutdown Voltage Input Low
1.1
V
V
GSIH
Gain Select Input High
1.2
V
V
GSIL
Gain Select Input Low
1.1
V
A
V
Closed Loop Gain
V
Gain Select =VDD
6dB
A
V
Closed Loop Gain
V
Gain Select = GND
12
dB
V
OS
Output Offset Voltage
10
mV
T
WU
Wake-up Time
6
ms
P
o
Output Power
THD = 1% (max), f = 1kHz,
22kHz BW
1.2
W
THD+N
Total Harmonic Distortion+Noise
P
O = 100mWRMS/Channel,
f
IN = 1kHz, 22kHz BW,
Both channels in phase
0.65
%
X
TALK
Channel Separation
P
O = 100mWRMS, f = 1kHz
57
dB
R
IN
Differential Input Resistance
V
Gain Select =VDD
90
k
Ω
V
Gain Select = GND
60
k
Ω
PSRR
Power Supply Rejection Ratio
V
Ripple = 100mVRMS sine wave,
f
RIPPLE = 217Hz
Inputs terminated to AC GND
60
dB
V
Ripple = 100mVRMS sine wave,
f
RIPPLE = 217Hz
P
OUT = 10mW,1kHz
65
dB
CMRR
Common Mode Rejection Ratio
V
Ripple = 100mVRMS,
f
Ripple = 217Hz, Input referred
48
dB
SNR
Signal to Noise Ratio
P
O =1WRMS; A-Weighted Filter
83
dB
e
OUT
Output Noise
A-Weighted filter, V
in = 0V
200
µV
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