PXT2222A datasheet(1/2 Pages) HOTTECH

Nome de Peças	PXT2222A

Descrição Electrónicos	Plastic-Encapsulate Transistors

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Fabricante Electrônico	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Página de início	http://www.hottech.net.cn/

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Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Epitaxial planar die construction.

Complementary NPN type available

PXT2907A.

Ideal for medium power amplification and switching.

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

75

V

Collector-Emitter Voltage

V

CEO

40

V

Emitter-Base Voltage

V

EBO

6

V

Collector Current -Continuous

I

C

600

mA

Collector Power Dissipation

P

C

500

mW

Storage Temperature

Tstg

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Collector-base breakdown voltage

VCBO

IC= 10μ A,IE=0

75

V

Collector-emitter breakdown voltage

VCEO

IC= 10mA, IB=0

40

V

Emitter-base breakdown voltage

VEBO

IE=10μA, IC=0

6

V

Collector cut-off current

ICBO

VCB=60V, IE=0

0. 01

μA

Emitter cut-off current

IEBO

VEB= 5V , IC=0

0. 01

μA

DC current gain

hFE(1)

VCE=10V, IC= 0.1mA

35

hFE(2)

VCE=10V, IC= 1mA

50

hFE(3)

VCE=10V, IC= 10mA

75

hFE(4)

VCE=10V, IC= 150mA

100

300

hFE(5)

VCE=1V, IC= 150mA

50

hFE(6)

VCE=10V, IC= 500mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=500mA, IB= 50mA

1

V

VCE(sat)

IC=150mA, IB=15mA

0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=500mA, IB=50mA

2.0

V

VBE(sat)

IC=150mA, IB=5mA

0.6

1.2

V

Transition frequency

fT

VCE=10V, IC=20mA

f=100MHz

300

MHz

Output Capacitance

Cob

VCB=10V, IE= 0,f=1MHz

8

pF

Delay time

td

VCC=30V, IC=150mA

VBE(off)=0.5V,IB1=15mA

10

nS

Rise time

tr

25

nS

Storage time

tS

VCC=30V, IC=150mA IB1=- IB2=

15mA

225

nS

Fall time

tf

60

nS

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

PXT2222A(NPN)

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