MMST3904 datasheet(1/2 Pages) HOTTECH

Nome de Peças	MMST3904

Descrição Electrónicos	Plastic-Encapsulate Transistors

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Fabricante Electrônico	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Página de início	http://www.hottech.net.cn/

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Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Power dissipation.(P C=0.2W)

APPLICATIONS

Audio frequency general purpose amplifier.

Marking: K2N

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

60

V

Collector-Emitter Voltage

V

CEO

40

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current -Continuous

I

C

200

mA

Collector Power Dissipation

PC

200

mW

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Uax

Unit

Collector-base breakdown voltage

VCBO

IC=10μA,IE=0

60

V

Collector-emitter breakdown voltage

VCEO

IC=1mA,IB=0

40

V

Emitter-base breakdown voltage

VEBO

IE=10μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=60V,IE=0

0.05

μA

Collector cut-off current

ICEO

VCE=40V,IB=0

0.5

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.05

μA

DC current gain

hFE

VCE=1V,IC=0.1mA

VCE=1V,IC=1mA

VCE=1V,IC=10mA

VCE=1V,IC=50mA

VCE=1V,IC=100mA

40

70

100

60

30

300

Collector-emitter saturation voltage

VCE(sat)

IC=10mA,IB=1mA

IC=50mA,IB=5mA

0.25

0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=10mA,IB=1mA

IC=50mA,IB=5mA

0.65

0.85

0.95

V

Transition frequency

fT

VCE=20V, IE= 10mA

f=100MHz

300

MHz

Collector output capacitance

Cob

VCB=5V, IE=0,f=1MHz

4

pF

Noise figure

NF

VCE=5V,IC=0.1mA,

f=1KHz,Rg=1KΩ

5

dB

Delay time

td

VCC=3V,VBE=0.5V,

IC=10mA,IB=1mA

35

nS

Rise time

tr

35

nS

Storage time

ts

VCC=3V,IC=10mA,

IB1=IB2=1mA

200

nS

Fall time

tf

50

nS

MMST3904(NPN)

1. BASE

2. EMITTER

SOT-323

3. COLLECTO

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