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MMDT3906 Folha de dados(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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MMDT3906 Folha de dados(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 2 page ![]() Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING: K3N MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO -40 V Collector-Emitter Voltage V CEO -40 V Emitter-Base Voltage V EBO -5 V Collector Current -Continuous I C -200 Collector Power Dissipation I C 200 Junction Temperature T J 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICEX VCE=-30V,VEB(OFF)=-3V -50 nA Base cut-off current IEBO VEB=-5V,IC=0 -50 nA DC current gain hFE(1) VCE=-1V,IC=-0.1mA 60 hFE(2) VCE=-1V,IC=-1mA 80 hFE(3) VCE=-1V,IC=-10mA 100 300 hFE(4) VCE=-1V,IC=-50mA 60 hFE(5) VCE=-1V,IC=-100mA 30 Collector-emitter saturation voltage VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V Base-emitter saturation voltage VBE(sat)1 IC=-10mA,IB=-1mA -0.65 -0.85 V VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V Transition frequency fT VCE=-20V,IC=-10mA,f=100MHz 250 MHz Collector output capacitance Cob VCB=-5V,IE=0,f=1MHz 4.5 pF Noise figure NF VCE=-5V,Ic=-0.1mA,f=1kHz,Rg=1KΩ 4 dB Delay time td VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA 35 nS Rise time tr 35 nS Storage time tS VCC=-3V, IC=-10mA IB1=-IB2=- 1mA 225 nS Fall time tf 75 nS MMDT3906(PNP) E 2 B 2 C 1 C 2 B 1 E 1 SOT-363 mW mA |
Nº de peça semelhante - MMDT3906 |
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Descrição semelhante - MMDT3906 |
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