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BC847BS Folha de dados(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Nome de Peças BC847BS
Descrição Electrónicos  Plastic-Encapsulate Transistors
PDF  2 Pages
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Fabricante Electrônico  HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]
Página de início  http://www.hottech.net.cn/
Logo HOTTECH - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

BC847BS Folha de dados(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

  BC847BS Datasheet HTML 1Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. BC847BS Datasheet HTML 2Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.  
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Page:P2-P1
Plastic-Encapsulate Transistors
GUANGDONG
HOTTECH
INDUSTRIAL
CO,. LTD.
(NPN)
E
2
B
2
C
1
C
2
B
1
E
1
SOT-363
Features
·
Ideally Suited for Automatic Insertion
·
For Switching and AF Amplifier Applications
·
Ultra-Small Surface Mount Package
·
Case: SOT-363, Molded Plastic
·
Case material - UL Flammability Rating
Classification 94V - 0
·
Moisture sensitivity: Level 1 per J-STD-020A
·
Terminals: Solderable per MIL-STD-202,
Method 208
·
Terminal Connections: See Diagram
·
Marking: K1F (See Page 2)
·
Weight: 0.006 grams
·
Ordering & Date Code Information: See Page 2
Mechanical Data
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
100
mA
Peak Collector Current
ICM
200
mA
Peak Base Current
IBM
200
mA
Power Dissipation (Note 1)
Pd
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
500
°C/W
Operating and Storage Temperature Range
Tj,TSTG
-55 to +125
°C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
DC Current Gain (Note 2)
hFE
200
—
450
—
VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage (Note 2)
VCE(SAT)
—
—
—
100
400
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage (Note 2)
VBE(SAT)
—
755
—
mV
IC = 10mA, IB = 0.5mA
Base-Emitter Voltage (Note 2)
VBE
580
665
700
mV
VCE = 5.0V, IC = 2.0mA
Collector Cutoff Current (Note 2)
ICBO
ICBO
—
—
—
15
5.0
nA
µA
VCB = 30V, IE = 0
VCB = 30V, Tj = 125°C
Emitter Cutoff Current (Note 2)
IEBO
—
—
100
nA
VEB = 5.0V, IC = 0
Gain Bandwidth Product
fT
100
—
—
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance
CCBO
——
1.5
pF
VCB = 10V, f = 1.0MHz
Emitter-Base Capacitance
CEBO
—11
—
pF
VEB = 0.5V, f = 1.0MHz
BC847BS


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