2SC2411 datasheet(1/2 Pages) HOTTECH

Nome de Peças	2SC2411

Descrição Electrónicos	Plastic-Encapsulate Transistors

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Fabricante Electrônico	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Página de início	http://www.hottech.net.cn/

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Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

High ICMax.ICMax. = 0.5mA

Low VCE(sat).Optimal for low voltage operation.

Complements the 2SA1036

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

40

V

Collector-Emitter Voltage

V

CEO

32

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current -Continuous

I

C

500

mA

Collector Power Dissipation

PC

200

mW

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=

100μA,IE=0

40

V

Collector-emitter breakdown voltage

VCEO

IC=

1mA,IB=0

32

V

Emitter-base breakdown voltage

VEBO

IE=

100μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=

20V,IE=0

1

μA

Emitter cut-off current

IEBO

VEB=

4V,IC=0

1

μA

DC current gain

hFE

VCE=

3V,IC=100mA

82

390

Collector-emitter saturation voltage

VCE(sat)

IC=

500mA,IB=50mA

0.4

V

Transition frequency

fT

VCE=

5V,IC=20mA,f=100MHz

250

MHz

Collector output capacitance

Cob

VCB=

10V,IE=0,f=1MHz

6.0

pF

Marking

CP

CQ

CR

Range

82-180

120-270

180-390

2SC2411(NPN)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

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