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LM4667 Folha de dados(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Nome de Peças LM4667
Descrição Electrónicos  Filterless High Efficiency 1.3W Switching Audio Amplifier
PDF  16 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  NSC [National Semiconductor (TI)]
Página de início  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM4667 Folha de dados(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (Note1)
6.0V
Storage Temperature
−65˚C to +150˚C
Voltage at Any Input Pin
V
DD + 0.3V
≥ V ≥ GND - 0.3V
Power Dissipation (Note 3)
Internally Limited
ESD Susceptibility (Note 4)
7.0kV
ESD Susceptibility (Note 5)
250V
Junction Temperature (T
J)
150˚C
Thermal Resistance
θ
JA (micro SMD)
220˚C/W
θ
JA (MSOP )
190˚C/W
θ
JC (MSOP)
56˚C/W
Soldering Information
See AN-1112 "microSMD Wafers Level Chip Scale
Package."
Operating Ratings (Note 2)
Temperature Range
T
MIN
≤ T
A
≤ T
MAX
−40˚C
≤ T
A
≤ 85˚C
Supply Voltage
2.7V
≤ V
DD
≤ 5.5V
Electrical Characteristics V
DD =5V
(Notes 1, 2)
The following specifications apply for V
DD = 5V and RL =15µH+8
Ω + 15µH unless otherwise specified. Limits apply for T
A =
25˚C.
Symbol
Parameter
Conditions
LM4667
Units
(Limits)
Typical
Limit
(Note 6)
(Notes 7, 8)
I
DD
Quiescent Power Supply Current
V
IN = 0V, No Load
V
IN = 0V, RL =15µH+8
Ω + 15µH
8
9
mA
mA
I
SD
Shutdown Current
V
SD = GND (Note 9)
0.01
µA
V
SDIH
Shutdown Voltage Input High
1.2
V
V
SDIL
Shutdown Voltage Input Low
1.1
V
V
GSIH
Gain Select Input High
1.2
V
V
GSIL
Gain Select Input Low
1.1
V
A
V
Closed Loop Gain
V
Gain Select =VDD
6dB
A
V
Closed Loop Gain
V
Gain Select = GND
12
dB
V
OS
Output Offset Voltage
10
mV
T
WU
Wake-up Time
5
ms
P
o
Output Power
THD = 2% (max), f = 1kHz
1.3
W
THD+N
Total Harmonic Distortion+Noise
P
O = 100mWRMS;fIN = 1kHz
0.8
%
R
IN
Differential Input Resistance
V
Gain Select =VDD
90
k
Ω
V
Gain Select = GND
60
k
Ω
PSRR
Power Supply Rejection Ratio
V
Ripple = 100mVRMS sine wave
Inputs terminated to GND
55
(f = 217Hz)
dB
V
Ripple = 100mVRMS sine wave
P
OUT = 10mW,1kHz
65
(f = 217Hz)
dB
CMRR
Common Mode Rejection Ratio
V
Ripple = 100mVRMS,
f
Ripple = 217Hz
41
dB
SNR
Signal to Noise Ratio
P
O =1WRMS; A-Weighted Filter
83
dB
e
OUT
Output Noise
A-Weighted filter, V
in = 0V
200
µV
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