IRLR/U3303

S

D

G

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

2.2

Case-to-Ambient (PCB mount)**

–––

50

°C/W

Junction-to-Ambient

–––

110

Thermal Resistance

…

Description

9/28/98

www.irf.com

1

D -P ak

T O -252 A A

I-P ak

TO -25 1A A

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per

silicon area.

This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are well known for,

provides the designer with an extremely efficient device for use in a wide

variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

Parameter

Max.

Units

35

…

25

A

Pulsed Drain Current



140

Power Dissipation

68

W

Linear Derating Factor

0.45

W/°C

Gate-to-Source Voltage

± 16

V

Single Pulse Avalanche Energy

‚

130

mJ

Avalanche Current



20

A

Repetitive Avalanche Energy



6.8

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

PD- 91316F