LLDB3 datasheet(2/2 Pages) DSK

Nome de Peças	LLDB3

Descrição Electrónicos	SILICON BIDIRECTIONAL DIACS

PDF	2 Pages

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Fabricante Electrônico	DSK [Diode Semiconductor Korea]

Página de início	http://www.diode.kr/

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1.04

1.00

1.02

1.06

1.08

100

125

VBO(TJ)

VBO(TJ=25

)

TJ(

)

10KΩ　　　　　　　　　 500KΩ　　　　　　　　　　　　　　　　D.U.T

220V

60Hz

0.1

µ F

R=20Ω

90%

10%

f=100Hz

TJ initial=25℃

ITRM(A)

100

10000

1000

0.01

0.1

tp(

µ s)

FIG.6--PEAK PULSEE CURRENT VERENT VERSUS

PULSE DURATION(MAXIMUM VALUES)

LLDB3.LLDB4

FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE

FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE

FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A

FIG.4--POWER DISSIPATION VERSUS AMBIENT

TEMPERATURE (MAXIMUM VALUES)

FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION

TEMPERATURE(TYPICAL VALUES)

+IF

-IF

-V

10mA

IBO

0.5VBO

Ｖ

VBO

40 50

100 110 120 130

100

120

140

160

P(mW)

Tamb( ℃　)

www.diode.kr

Diode Semiconductor Korea

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