K6X1008T2D datasheet(8/9 Pages) SAMSUNG

Nome de Peças	K6X1008T2D

Descrição Electrónicos	128Kx8 bit Low Power CMOS Static RAM

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrônico	SAMSUNG [Samsung semiconductor]

Página de início	http://www.samsung.com/Products/Semiconductor

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CMOS SRAM

K6X1008T2D Family

Revision 1.0

September 2003

DATA RETENTION WAVE FORM

CS1 controlled

VCC

2.7V

2.2V

VDR

CS1

GND

Data Retention Mode

≥VCC - 0.2V

tSDR

tRDR

TIMING WAVEFORM OF WRITE CYCLE(3) (CS2 Controlled)

Address

CS1

tAW

NOTES (WRITE CYCLE)

1. A write occurs during the overlap of a low CS1, a high CS2 and a low WE. A write begins at the latest transition among CS1 goes low,

CS2 going high and WE going low: A write end at the earliest transition among CS1 going high, CS2 going low and WE going high,

tWP is measured from the begining of write to the end of write.

2. tCW is measured from the CS1 going low or CS2 going high to the end of write.

3. tAS is measured from the address valid to the beginning of write.

4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS1 or WE going high tWR2 applied

in case a write ends as CS2 going to low.

CS2

tCW(2)

Data in

Data Valid

Data out

High-Z

tCW(2)

tWR(4)

tWP(1)

tDW

tDH

tAS(3)

tWC

CS2 controlled

VCC

2.7V

0.4V

VDR

CS2

GND

Data Retention Mode

tSDR

tRDR

CS2

≤0.2V

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