IRF422 datasheet(1/2 Pages) ISC

Nome de Peças	IRF422

Descrição Electrónicos	isc N-Channel MOSFET Transistor

PDF	2 Pages

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

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isc N-Channel MOSFET Transistor

IRF422

DESCRIPTION

·silicon Gate for fast switching at elevate

·rugged

·low drive requirements

·ease of paralleling

APPLICATIONS

·high speed applications such as

Switching power supplies,AC and DCmotor controls

relay and solenoid driver.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

500

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

2.2

A

Ptot

Total Dissipation@TC=25℃

50

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.5

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

30

℃/W

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Nº de peça semelhante - IRF422

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Samsung semiconductor	IRF422	211Kb / 5P	N-CHANNEL POWER MOSFETS
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Intersil Corporation	IRF422	69Kb / 7P	2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs July 1998
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ARTSCHIP ELECTRONICS CO...	IRF422	381Kb / 5P	N-Channel Power MOSFETs

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