IRF232 datasheet(1/2 Pages) ISC

Nome de Peças	IRF232

Descrição Electrónicos	High Power,High Speed Applications

PDF	2 Pages

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

IRF232

DESCRIPTION

·Drain Current ID=8A@ TC=25℃

·Drain Source Voltage-

: VDSS= 200V(Min)

·Static Drain-Source On-Resistance

: RDS(on) =0.6Ω(Max)

·High Power,High Speed Applications

APPLICATIONS

·Switching power supplies

·Motor controls,converters and solenoid driver

·High energy pulse circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

200

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

8

A

Ptot

Total Dissipation@TC=25℃

75

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.67

℃/W

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Nº de peça semelhante - IRF232

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Samsung semiconductor	IRF232	212Kb / 5P	N-CHANNEL POWER MOSFETS
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IRF232 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

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