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IRF152 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF152 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRF152 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA 100 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=20A 0.08 Ω IGSS Gate Source Leakage Current VGS=±20V;VDS=0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=100V; VGS=0 250 uA VSD Diode Forward Voltage IS=33A; VGS=0 2.3 V Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 3000 pF Crss Reverse Transfer Capacitance 500 Coss Output Capacitance 1500 tr Rise Time VGS=10V; RGS=50Ω ID=20A; VDD=75V; RL=50Ω 450 ns td(on) Turn-on Delay Time 75 tf Fall Time 200 td(off) Turn-off Delay Time 300 PDF pdfFactory Pro www.fineprint.cn |
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