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BUZ63 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças BUZ63
Descrição Electrónicos  SOA is Power Dissipation Limited
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUZ63 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUZ63 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUZ63 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
BUZ63
DESCRIPTION
·7.5A, 400V
·SOA is Power Dissipation Limited
·Nanosecond Switching Speeds
·Linear Transfer Characteristics
·High Input Impedance
·Majority Carrier Device
APPLICATIONS
·applications such as switching regulators, switching
converters, motor drivers,relay drivers, and drivers for
high power bipolar switching transistors requiring high
speed and low gate drive power.
applications such as switching regulators
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37℃
7.5
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.6
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
35
℃/W
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