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BUZ45B Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças BUZ45B
Descrição Electrónicos  SOA is Power Dissipation Limited
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUZ45B Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUZ45B Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUZ45B Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
BUZ45B
DESCRIPTION
·Static Drain-Source On-Resistance
: RDS(on) = 0.5Ω(Max)
·SOA is Power Dissipation Limited
APPLICATIONS
designed for applications such as switching regulators,
switching converters, motor drivers,relay drivers and
drivers for high power bipolar switching transistors
requiring high speed and low gate drive power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37℃
10
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
35
℃/W
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