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AMIS-30663 Folha de dados(PDF) 7 Page - ON Semiconductor

Nome de Peças AMIS-30663
Descrição Electrónicos  High Speed CAN Transceiver
PDF  11 Pages
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
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AMIS-30663 Folha de dados(HTML) 7 Page - ON Semiconductor

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7
Table 7. DC Characteristics
(VCC = 4.75 to 5.25 V; V33 = 2.9 V to 3.6 V; Tjunc = −40 to +150°C; RLT = 60 W unless specified otherwise.)
Symbol
Unit
Max.
Typ.
Min.
Conditions
Parameter
Bus Lines (pins CANH and CANL)
Ri(dif)
Differential input resistance
25
50
75
KW
Ci(CANH)
Input capacitance at pin CANH
VTxD = VCC; not tested
7.5
20
pF
Ci(CANL)
Input capacitance at pin CANL
VTxD = VCC; not tested
7.5
20
pF
Ci(dif)
Differential input capacitance
VTxD = VCC; not tested
3.75
10
pF
ILI(CANH)
Input leakage current at pin CANH
VCC = 0 V; VCANH = 5 V
10
170
250
mA
ILI(CANL)
Input leakage current at pin CANL
VCC = 0 V; VCANL = 5 V
10
170
250
mA
VCM−peak
Common−mode peak during transition
from dom → rec or rec → dom
Figures 8 and 9
−500
500
mV
VCM−step
Difference in common−mode between
dominant and recessive state
Figures 8 and 9
−150
150
mV
Power on Reset
PORL
POR level
CANH, CANL,
Vref in tri−
state below POR level
2.2
3.5
4.7
V
Thermal Shutdown
Tj(sd)
shutdown junction temperature
150
160
180
°C
Timing Characteristics (see Figures 6 and 7)
td(TxD−BUSon)
Delay TxD to bus active
40
85
110
ns
td(TxD−BUSoff)
Delay TxD to bus inactive
30
60
110
ns
td(BUSon−RxD)
Delay bus active to RxD
25
55
110
ns
td(BUSoff−RxD)
Delay bus inactive to RxD
65
100
135
ns
tpd(rec−dom)
Propagation delay TxD to RxD from
recessive to dominant
100
230
ns
td(dom−rec)
Propagation delay TxD to RxD from
dominant to recessive
100
245
ns
tdom(TxD)
TxD dominant time for time out
VTxD = 0 V
250
450
750
ms
7. Not tested on ATE.
Table 8. Digital Output Characteristics @ V33 = 2.5 V
(VCC = 4.75 to 5.25 V; V33 = 2.5 V ±5%; Tjunc = −40 to +150°C; RLT = 60 W unless specified otherwise.)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Receiver Data Output (pin RxD)
Ioh
HIGH−level output current
VOH > 0.9 x V33
−2.6
mA
Iol
LOW−level output current
VOL < 0.1 x V33
4
mA



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