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PS252C1 Folha de dados(PDF) 7 Page - Silicon Touch Technology Inc.

Nome de Peças PS252C1
Descrição Electrónicos  Over/Under-voltage protection and lock out
PDF  10 Pages
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Fabricante Electrônico  SITI [Silicon Touch Technology Inc.]
Página de início  http://www.siti.com.tw
Logo SITI - Silicon Touch Technology Inc.

PS252C1 Folha de dados(HTML) 7 Page - Silicon Touch Technology Inc.

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2-Channel Secondary Monitoring IC
Version
：A.003
PAGE 6
未經授權而逕予重製、複製、使用或公開本文件，行為人得被追究侵權之相關民刑事責任
Unauthorized reproduction, duplication, use or disclosure of this document will be deemed as infringement.
PS252C1
Electrical Characteristics (Continued)
PGO, Open Drain Digital Output
Parameter
Conditions
MIN
TYP
MAX
Unit
Leakage Current (ILKG)
VPGO=5V
5
uA
Low Level Output Voltage (VOL)
ISINK=10mA
0.3
V
Over-Current Section
Parameter
Conditions
MIN
TYP
MAX
Unit
VS12A/B Offset Voltage
-5
0
5
mV
Constant VRI multiply Current Gain ( K )
9.0
10.0
10.75
FPO/, Open Drain Digital Output
Parameter
Conditions
MIN
TYP
MAX
Unit
Leakage Current (ILKG)
VFPO/=5V
5
uA
Low Level Output Voltage (VOL)
ISINK=20mA
0.4
V
External Protection Detect Section
Parameter
Conditions
MIN
TYP
MAX
Unit
Threshold(VTH)
1.15
1.20
1.25
V
Hysteresis (VHYST)
+/-20
+/-50
mV
Switching Characteristics, Vcc=12V, Ta = 25°C.
Parameter
Conditions
MIN
TYP
MAX
Unit
PGI to PGO Delay Time (Td1)
200
300
400
mS
PGI< 0.65V
Disable UV/OC Pretection
Short Circuit Delay Time (Td2)
PGI> 0.65V
49
75
114
mS
PGO to FPO/ Delay Time (Td3)
2
4
6
mS
Under Voltage Delay Time (Td4)
47
73
110
uS
Over Current Delay Time (Td5)
13
20
27
mS
Over Voltage Delay Time (Td6)
15
22
30
uS
Pext Delay Time (Td7)
47
73
110
uS
PSON/ De-bounce Time (Tb1)
24
38
61
mS
PGO Noise De-glitch Time (Tb2)
47
73
100
uS



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