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BUY58 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited

Nome de Peças BUY58
Descrição Electrónicos  Collector-Emitter Breakdown Voltage-: V(BR)CEO= 160V(Min.)
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUY58 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUY58 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUY58 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
BUY58
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 100mA; IB= 0
160
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 10A; IB= 1.25A
1.3
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 10A; IB= 1.25A
1.5
V
VBE(on)-1
Base-Emitter On Voltage
IC= 10A; VCE= 1.5V
1.5
V
VBE(on)-2
Base-Emitter On Voltage
IC= 12A; VCE= 1.5V
1.7
V
VBE(on)-2
Base-Emitter On Voltage
IC= 1A; VCE= 1.5V
1.0
V
ICES
Collector Cutoff Current
VCE= 250V; VBE= 0
VCE= 250V; VBE= 0; TC= 125℃
1.0
10
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 1A; VCE= 1.5V
20
hFE-2
DC Current Gain
IC= 10A; VCE= 1.5V
12
hFE-3
DC Current Gain
IC= 12A; VCE= 1.5V
10
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
20
MHz
COB
Collector Output Capacitance
IE= 0; VCB= 10V, f= 1MHz
330
pF
Switching Times
ton
Turn-On Time
IC= 10A; IB1= -IB2= 1A; VCC= 60V;
tp= 10μs
1.0
μs
ts
Storage Time
1.6
μs
tf
Fall Time
0.6
μs



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