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BUY56 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças BUY56
Descrição Electrónicos  Collector-Emitter Breakdown Voltage-: V(BR)CEO= 160V(Min.)
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUY56 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUY56 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUY56 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistor
BUY56
DESCRIPTION
·
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V@ IC= 7A
APPLICATIONS
·Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
250
V
VCES
Collector-Emitter Voltage
250
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation
@TC≤75℃
60
W
Tj
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.66
℃/W


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