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BU2532AW Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU2532AW Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor BU2532AW ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.17A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.17A 0.97 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 9 27 hFE-2 DC Current Gain IC= 7A; VCE= 5V 6 12.5 Switching times tstg Storage Time IC= 7A , IB(end)= 1A; LC= 100μH; VCC= 138V; Cfb= 3nF 1.8 μs tf Fall Time 0.1 μs |
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