GaAs SPDT Switch

DC - 3.0 GHz

Rev. V2

MASWSS0166

2

2

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2

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

DC - 1 GHz

1 - 2 GHz

2 - 3 GHz

dB

dB

dB

—

—

—

0.3

0.4

0.55

0.4

0.5

0.7

Isolation

DC - 1 GHz

1 - 2 GHz

2 - 3 GHz

dB

dB

dB

19

13

10

21

15

12

—

—

—

VSWR

DC - 3 GHz

Ratio

—

1.2:1

—

500 MHz - 3 GHz,

Vc = 2.7 V

dBm

—

24

—

500 MHz - 3 GHz,

Vc = 5 V

dBm

—

27

—

2-Tone, 900 MHz, 5 MHz spacing,

Vc = 2.7 V

dBm

—

81

—

2-Tone 900 MHz, 5 MHz spacing,

Vc = 2.7V

dBm

—

55

—

Trise, Tfall

Ton, Toff

Transients

10% to 90% RF, 90% to 10% RF

50% Control to 90% RF, 50% Control to 10% RF

In-Band

nS

nS

mV

—

—

—

10

20

10

—

—

—

Control Current

Vc = 2.5 V

µA

—

4

15

4

4. For positive voltage control, external DC blocking capacitors are required on all RF ports.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be dam-

aged by static electricity. Proper ESD control tech-

niques should be used when handling these de-

vices.

V1

V2

RFC-RF1

RFC-RF2

0

1

On

Off

1

0

Off

On

5. Differential voltage, V(state 1) - V(state 0), must be

+2.5 V minimum and must not exceed 8 V.

6. 0 = -8 V to 0 V, 1 = -5.5 V to 8 V

† Reference Application Note M538 for lead-free solder reflow

recommendations.