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TPD7104F Folha de dados(PDF) 5 Page - Toshiba Semiconductor

Nome de Peças TPD7104F
Descrição Electrónicos  1 channel High-Side N channel Power MOSFET Gate Driver
PDF  13 Pages
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD7104F Folha de dados(HTML) 5 Page - Toshiba Semiconductor

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TPD7104F
2014-10-8
5
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Remarks
Power supply voltage
DC
VDD(1)
-0.3 to 24
V
-
Pulse
VDD(2)
40
V
t=300ms single pulse
Input voltage
VIN
-0.3 to 6
V
-
Output voltage
VOUT
-0.3 to internally limited
V
-
Output source current
IOUT(-)
Internal capacity
mA
Source current
Output sink current
IOUT(+)
5
mA
Sink current
IS pin voltage
VIS
-0.3 to 6
V
-
Diagnosis output voltage
VDIAG
-0.3 to 6
V
-
Diagnosis pin current
IDIAG
5
mA
-
Power dissipation
(Note1-a)
PD(1)
0.7
W
-
Power dissipation
(Note1-b)
PD(2)
0.35
W
-
Operateing temperature
Topr
-40 to 125
°C
-
Junction temperature
Tj
150
°C
-
Strage temerature
Tstg
-55 to 150
°C
-
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Resistance
Characteristics
Symbol
Rating
unit
Thermal resistance, junction to ambient
Rth (j–a)
178.6(Note 1-a)
°C / W
357.2(Note 1-b)
Note 1:
(Note 1-a) Glass epoxy board
(Note 1-b) Glass epoxy board
Glass epoxy board
Material: FR-4
25.4mm×25.4mm×0.8mm
Glass epoxy board
Material: FR-4
25.4mm×25.4mm×0.8mm



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