NPT2021 datasheet(2/9 Pages) MA-COM

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GaN Wideband Transistor 48 V, 45 W

DC - 2.5 GHz

Rev. V1

NPT2021

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RF Electrical Specifications: TC = 25C, VDS = 48 V, IDQ = 350 mA

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Units

Small Signal Gain

CW, 2.5 GHz

GSS

14.2

Saturated Output Power

CW, 2.5 GHz

PSAT

47.5

dBm

Drain Efficiency at Saturation

CW, 2.5 GHz

SAT

Power Gain

2.5 GHz, POUT = 45 W

12.8

Drain Efficiency

2.5 GHz, POUT = 45 W



Ruggedness: Output Mismatch

All phase angles



VSWR = 15:1, No Device Damage

DC Electrical Characteristics: TC = 25C

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Units

Drain-Source Leakage Current

VGS = -8 V, VDS = 160 V

IDLK

Gate-Source Leakage Current

VGS = -8 V, VDS = 0 V

IGLK

Gate Threshold Voltage

VDS = 48 V, ID = 14 mA

-2.5

-1.8

-0.5

Gate Quiescent Voltage

VDS = 48 V, ID = 350 mA

VGSQ

-2.1

-1.5

-0.3

On Resistance

VDS = 2 V, ID = 105 mA

RON

0.34



Saturated Drain Current

VDS = 7 V pulsed, pulse width 300 µs

ID(SAT)

8.2

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