12N50C3 datasheet(1/11 Pages) INFINEON

Nome de Peças	12N50C3

Descrição Electrónicos	Cool MOS Power Transistor

PDF	11 Pages

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Fabricante Electrônico	INFINEON [Infineon Technologies AG]

Página de início	http://www.infineon.com

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1 / 11 page

2003-06-30

Page 1

SPW12N50C3

Final data

Cool MOS™ Power Transistor

VDS @ Tjmax

560

V

RDS(on)

0.38

Ω

ID

11.6

A

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

P-TO247

Type

Package

Ordering Code

SPW12N50C3

P-TO247

Q67040-S4580

Marking

12N50C3

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

TC = 25 °C

TC = 100 °C

ID

11.6

7

A

Pulsed drain current, t

p limited by Tjmax

ID puls

34.8

Avalanche energy, single pulse

ID = 5.5 A, VDD = 50 V

EAS

340

mJ

Avalanche energy, repetitive tAR limited by Tjmax1)

ID = 11.6 A, VDD = 50 V

EAR

0.6

Avalanche current, repetitive tAR limited by Tjmax IAR

11.6

A

Reverse diode dv/dt

IS=11.6A, VDS=480V, Tj=125°C

dv/dt

6

V/ns

Gate source voltage

VGS

±20

V

Gate source voltage AC (f >1Hz)

VGS

±30

Power dissipation, TC = 25°C

Ptot

125

W

Operating and storage temperature

Tj , Tstg

-55... +150

°C

Nº de peça semelhante - 12N50C3

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Descrição semelhante - 12N50C3

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12N50C3 Folha de dados(PDF) 1 Page - Infineon Technologies AG

12N50C3 Folha de dados(HTML) 1 Page - Infineon Technologies AG

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