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STGWA30M65DF2 Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STGWA30M65DF2
Descrição Electrónicos  Trench gate field-stop IGBT, M series 650 V, 30 A low loss
PDF  19 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA30M65DF2 Folha de dados(HTML) 1 Page - STMicroelectronics

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December 2015
DocID027768 Rev 3
1/19
This is information on a product in full production.
www.st.com
STGW30M65DF2,
STGWA30M65DF2
Trench gate field-stop IGBT, M series 650 V, 30 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of minimum short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 50 A
Tight parameters distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description plur
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the M series
of IGBTs, which represent an optimum
compromise in performance to maximize the
efficiency of inverter systems where low-loss and
short-circuit capability are essential. Furthermore,
a positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packaging
STGW30M65DF2
G30M65DF2
TO-247
Tube
STGWA30M65DF2
G30M65DF2
TO-247 long leads
Tube


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