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STTH15R06FP Folha de dados(PDF) 5 Page - STMicroelectronics |
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STTH15R06FP Folha de dados(HTML) 5 Page - STMicroelectronics |
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5 / 9 page ![]() STTH15R06 Characteristics Doc ID 7974 Rev 2 5/9 Figure 7. Reverse recovery charges versus dIF/dt (90% confidence) Figure 8. Softness factor versus dIF/dt (typical values) Figure 9. Relative variation of dynamic parameters versus junction temperature Figure 10. Transient peak forward voltage versus dIF/dt (90% confidence) Figure 11. Forward recovery time versus dIF/dt (90% confidence) Figure 12. Junction capacitance versus reverse voltage applied (typical values) 0 100 200 300 400 500 600 700 800 0 200 400 600 800 1000 dIF/dt(A/µs) VR=400V Tj=125°C IF=IF(av) IF=0.5 x IF(av) IF=2 x IF(av) Qrr(nC) 0.10 0.15 0.20 0.25 0.30 0.35 0 200 400 600 800 1000 dIF/dt(A/µs) IF=IF(av) VR=400V Tj=125°C S factor 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 25 50 75 100 125 Tj(°C) IRM Qrr S factor Reference: Tj=125°C IF=IF(av) VR=400V Tj=125°C 0 1 2 3 4 5 6 7 8 9 10 11 12 0 100 200 300 400 500 dIF/dt(A/µs) IF=IF(av) Tj=125°C VFP(V) 0 20 40 60 80 100 120 140 160 180 200 220 240 260 0 100 200 300 400 500 dIF/dt(A/µs) IF=IF(av) VFR=1.1 x VF max. Tj=125°C tfr(ns) 10 100 1000 1 10 100 1000 VR(V) F=1MHz Vosc=30mV Tj=25°C C(pF) |
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