CFY66

Semiconductor Group

2 of 8

Draft D, September 99

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain-source voltage

3.5

V

Drain-gate voltage

4.5

V

Gate-source voltage (reverse / forward)

- 3... + 0.5

V

Drain current

60

mA

Gate forward current

2mA

RF Input Power, C- and X-Band

1)

+ 10

dBm

Junction temperature

150

°C

Storage temperature range

- 65... + 150

°C

Total power dissipation

2)

200

mW

Soldering temperature

3)

230

°C

Thermal Resistance

Junction-soldering point

≤ 515 (tbc.)

K/W

Notes.:

3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have

elapsed.