BC808 datasheet(2/5 Pages) INFINEON

Nome de Peças	BC808

Descrição Electrónicos	PNP Silicon AF Transistors

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrônico	INFINEON [Infineon Technologies AG]

Página de início	http://www.infineon.com

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2 / 5 page

BC807, BC808

Nov-29-2001

Electrical Characteristics

at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

BC807

BC808

V(BR)CEO

Collector-base breakdown voltage

IC = 10 µA, IE = 0

BC807

BC808

V(BR)CBO

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

Collector cutoff current

VCB = 25 V, IE = 0

ICBO

100

Collector cutoff current

VCB = 25 V, IE = 0 , TA = 150 °C

ICBO

µA

Emitter cutoff current

VEB = 4 V, IC = 0

IEBO

100

DC current gain 1)

IC = 100 mA, VCE = 1 V

hFE-grp. 16

hFE-grp. 25

hFE-grp. 40

hFE

100

160

250

160

250

350

250

400

630

DC current gain 1)

IC = 500 mA, VCE = 1 V

hFE

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VCEsat

0.7

Base-emitter saturation voltage 1)

IC = 500 mA, IB = 50 mA

VBEsat

1.2

1) Pulse test: t

≤ 300µs, D = 2%

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