LIA136STR datasheet(4/13 Pages) IXYS

4 / 13 page

INTEGRATED CIRCUITS DIVISION

LIA135 / LIA136

www.ixysic.com

R01

1.4 Electrical Characteristics

1 Reference voltage measured at Pin FB under the specified conditions.

2 Deviation parameters VREF(DEV) and IIB(DEV) are defined as the difference between the minimum and maximum values obtained over the rated temperature range.

3 With two external resistors, the total shunt transconductance of the circuit is defined as:

4 See Figure 9: Operational Template on page 6.

5 Common mode transient immunity at Output = High is the maximum positive dVcm/dt on the rising edge of the common mode impulse signal, Vcm, to ensure the

output will remain high. Common mode transient immunity at Output = Low is the maximum negative dVcm/dt on the falling edge of the common pulse signal, Vcm,

to ensure the output will remain low.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Input Characteristics @ 25°C (Unless Otherwise Specified)

Input voltage

VLED

LIA135:

TA=-40°C to +85°C

1.6

LIA136:

TA=-40°C to +110°C

LED forward voltage

VFB=VCOMP=GND, ILED=5mA (Fig. 1)

0.9

1.4

Reference voltage 1

VREF

VLED=1.6V, ILED=10mA (Fig. 2)

TA=25°C

1.293

1.299

1.305

LIA135:

TA=-40°C to +85°C

1.286

1.299

1.312

LIA136:

TA=-40°C to +110°C

1.280

1.299

1.318

Deviation of VREF over temperature

VREF(DEV)

VLED=1.6V, ILED=10mA, (Fig. 2)

LIA135:

TA=-40°C to +85°C

-3

LIA136:

TA=-40°C to +110°C

-6

Ratio of VREF variation to VLED change

V

REF/VLED

1.6V

< VLED < 10V, ILED=10mA (Fig. 2)

-0.37

-2.7

mV/V

FB input bias current

IIB

VLED=1.6V, ILED=10mA (Fig. 2)

0.1

0.34

0.5

A

Deviation of IIB over temperature

IIB(DEV)

VLED=1.6V, ILED=10mA, (Fig. 2)

A

LIA135:

TA=-40°C to +85°C

0.35

0.55

LIA136:

TA=-40°C to +110°C

-0.4

0.6

Quiescent bias current

VLED=1.6V, VFB < VREF, IF=0mA (Fig. 5)

100

A

Error amplifier Off-State current

ILED(off)

VLED=10V, VFB=0V (Fig. 3)

0.001

0.1

A

Shunt transconductance 3

gm (ILED/VFB)VLED=1.6V, ILED = 0.2mA to 10mA @ f=1kHz (Fig. 2)

-1

Output Characteristics @ 25°C (Unless Otherwise Specified)

Collector dark current

ICE

VCE=10V, RB=1M (Fig. 4)

0.3

Collector-emitter breakdown voltage

BVCEO

IC=1mA

Emitter-collector breakdown voltage

BVECO

IE=100A

Transfer Characteristics @ 25°C (Unless Otherwise Specified)

Current transfer ratio

CTR

ILED=5mA, VCE=5V, RB=1M (Fig. 5)

500

2000

Bandwidth

(Fig. 7)

kHz

Collector-emitter saturation voltage

VCE(sat)

ILED=10mA, IC=2.5mA, RB=1M (Fig. 5)

0.099

0.5

Minimal Operating Point Output Current 4

IC(min)

VLED=10V (Fig. 6)

LIA135: VFB=1.258V, TA= -40°C to +85°C

-1

A

LIA136: VFB=1.252V, RB=1M, TA= -40°C to +110°C

-1

Full-on Operating Point Output Current 4

IC(on)

VLED=1.6V, (Fig. 6)

LIA135: VFB=1.307V, TA= -40°C to +85°C

LIA136: VFB=1.313V, RB=1M, TA= -40°C to +110°C

Common Mode Transient Immunity Characteristics @ 25°C (Unless Otherwise Specified)

Output = High 5

|CMH|ILED=0mA, VCM=10VPP, RC=2.2k (Fig. 8)

LIA135:

V/ns

LIA136:

RB=1M,CB=100pF

-20-

Output = Low 5

|CML|ILED=10mA, VCM=10VPP, RC=2.2k (Fig. 8)

LIA135:

V/ns

LIA136:

RB=1M,CB=100pF

-20-



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