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MMBF170Q Folha de dados(PDF) 2 Page - Diodes Incorporated |
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MMBF170Q Folha de dados(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page ![]() MMBF170Q Document number: DS37720 Rev. 1 - 2 2 of 5 www.diodes.com January 2015 © Diodes Incorporated MMBF170Q Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS ≤ 1.0MΩ VDGR 60 V Gate-Source Voltage Continuous Pulsed VGSS ±20 ±40 V Drain Current (Note 6) Continuous Pulsed ID 500 800 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 6) PD 300 1.80 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 K/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 100μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±15V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 0.8 2.1 3.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ ⎯ ⎯ 5.0 5.3 Ω VGS = 10V, ID = 200mA VGS = 4.5V, ID = 50mA Forward Transconductance gFS 80 ⎯ ⎯ mS VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 22 40 pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss ⎯ 11 30 pF Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF SWITCHING CHARACTERISTICS Turn-On Time ton ⎯ ⎯ 10 ns VDD = 25V, ID = 0.5A, VGS = 10V, RGEN = 50Ω Turn-Off Time toff ⎯ ⎯ 10 ns Notes: 6. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com. 7. Short duration pulse test used to minimize self-heating effect. |
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