NTS12100EMFST1G datasheet(3/5 Pages) ONSEMI

Nome de Peças	NTS12100EMFST1G

Descrição Electrónicos	Very Low Leakage Trench-based Schottky Rectifier

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrônico	ONSEMI [ON Semiconductor]

Página de início	http://www.onsemi.com

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3 / 5 page

NTS12100EMFS, NRVTS12100EMFS

http://onsemi.com

TYPICAL CHARACTERISTICS

100

110

120

130

140

150

160

170

Figure 1. Typical Instantaneous Forward

Characteristics

Figure 2. Maximum Instantaneous Forward

Characteristics

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Figure 3. Typical Reverse Characteristics

Figure 4. Maximum Reverse Characteristics

VR, INSTANTANEOUS REVERSE VOLTAGE (V)

Figure 5. Typical Junction Capacitance

Figure 6. Current Derating TO−220AB

VR, REVERSE VOLTAGE (V)

TC, CASE TEMPERATURE (°C)

TA = 125°C

TA = 150°C

TA = 25°C

TA = 125°C

TA = 150°C

TA = 125°C

TA = 150°C

TA = 25°C

1.E−06

1.E−05

1.E−04

1.E−03

1.E−02

1.E−01

1.E+00

100

TA = 125°C

TA = 150°C

TA = 25°C

TJ = 25°C

RqJC = 2.0 °C/W

Square Wave

0.1

100

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

TA = −55°C

0.1

100

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9 1.0

TA = 25°C

TA = −55°C

1.E−06

1.E−05

1.E−04

1.E−03

1.E−02

1.E−01

1.E+00

102030405060708090 100

100

10k

0.1

100

TA = 175°C

1.E−07

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