NTMFS4926NET3G datasheet(1/7 Pages) ONSEMI

Nome de Peças	NTMFS4926NET3G

Descrição Electrónicos	Single N?묬hannel Power MOSFET

PDF	7 Pages

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

Página de início	http://www.onsemi.com

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May, 2012 − Rev. 1

1

Publication Order Number:

NTMFS4926NE/D

NTMFS4926NE

Power MOSFET

30 V, 44 A, Single N−Channel, SO−8 FL

Features

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• Dual Sided Cooling Capability

• Optimized for 5 V, 12 V Gate Drives

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• CPU Power Delivery

• DC−DC Converters

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA

(Note 1)

Steady

State

TA = 25°C

ID

15.5

A

TA = 100°C

9.8

Power Dissipation

RqJA (Note 1)

TA = 25°C

PD

2.70

W

Continuous Drain

Current RqJA ≤ 10 s

(Note 1)

TA = 25°C

ID

23.4

A

TA = 100°C

14.8

Power Dissipation

RqJA ≤ 10 s (Note 1)

TA = 25°C

PD

6.13

W

Continuous Drain

Current RqJA

(Note 2)

TA = 25°C

ID

9.0

A

TA = 100°C

5.7

Power Dissipation

RqJA (Note 2)

TA = 25°C

PD

0.92

W

Continuous Drain

Current RqJC

(Note 1)

TC = 25°C

ID

44

A

TC =100°C

28

Power Dissipation

RqJC (Note 1)

TC = 25°C

PD

21.6

W

Pulsed Drain

Current

TA = 25°C, tp = 10 ms

IDM

182

A

Current Limited by Package

TA = 25°C

IDmax

100

A

Operating Junction and Storage

Temperature

TJ,

TSTG

−55 to

+150

°C

Source Current (Body Diode)

IS

21

A

Drain to Source DV/DT

dV/dt

6.0

V/ns

Single Pulse Drain−to−Source Avalanche

Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,

IL = 21 Apk, L = 0.1 mH, RG = 25 W)

EAS

22

mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

MARKING

DIAGRAM

http://onsemi.com

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

4926NE

AYWZZ

1

V(BR)DSS

RDS(ON) MAX

ID MAX

30 V

7.0 mW @ 10 V

44 A

12.0 mW @ 4.5 V

N−CHANNEL MOSFET

Device

Package

Shipping†

ORDERING INFORMATION

NTMFS4926NET1G

SO−8 FL

(Pb−Free)

1500 /

Tape & Reel

NTMFS4926NET3G

SO−8 FL

(Pb−Free)

5000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

S

G

D

G (4)

S (1,2,3)

D (5,6)

Nº de peça semelhante - NTMFS4926NET3G

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
ON Semiconductor	NTMFS4926N	118Kb / 7P	Power MOSFET 30 V, 44 A, Single N?묬hannel, SO?? FL May, 2012 ??Rev. 5
	NTMFS4926NT1G	118Kb / 7P	Power MOSFET 30 V, 44 A, Single N?묬hannel, SO?? FL May, 2012 ??Rev. 5
	NTMFS4926NT3G	118Kb / 7P	Power MOSFET 30 V, 44 A, Single N?묬hannel, SO?? FL May, 2012 ??Rev. 5

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