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MMDFS2P102R2 Folha de dados(PDF) 5 Page - ON Semiconductor

Nome de Peças MMDFS2P102R2
Descrição Electrónicos  Power MOSFET
PDF  11 Pages
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMDFS2P102R2 Folha de dados(HTML) 5 Page - ON Semiconductor

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MMDFS2P102
http://onsemi.com
5
TYPICAL FET ELECTRICAL CHARACTERISTICS
Mounted on 2
″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one die operating, 10 s max.
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and
Drain−To−Source Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
5.0
20
−10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1200
800
1000
600
QG, TOTAL GATE CHARGE (nC)
16
0
6.0
4.0
2.0
0
100
1.0
RG, GATE RESISTANCE (OHMS)
1000
100
10
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.5
2.0
1.6
1.2
0.8
0.4
0
0.7
0.1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.1
0.01
TJ, STARTING JUNCTION TEMPERATURE (°C)
50
150
25
350
300
50
0
1.0
400
200
0
−5.0
0
10
4.0
8.0
12
12
10
0.9
1.1
1.3
1.5
10
1.0
75
100
125
100
15
100
10
100
10
8.0
150
200
250
ID = 6.0 A
VDS = 0
VGS = 0
TJ = 25°C
VGS = 0 V
TJ = 25°C
Ciss
Ciss
Coss
Crss
Crss
ID = 2.0 A
TJ = 25°C
VDS
VGS
QT
Q2
Q1
Q3
td(off)
td(on)
tr
tf
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
10 ms
1.0 ms
100
ms
10
ms
VGS = 20 V
SINGLE PULSE
TC = 25°C
VGS
VDS
0
18
16
14
12
10
8.0
6.0
4.0
2.0



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