SB340G-CB2-R datasheet(3/4 Pages) UTC

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SB340

Preliminary

DIODE

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R601-043.f



ABSOLUTE MAXIMUM RATINGS (TA =25°C unless otherwise specified.)(Note 2)

PARAMETER

SYMBOL

RATINGS

UNIT

DC Blocking Voltage

Peak Repetitive Reverse Voltage

VRRM

Working Peak Reverse Voltage

VRWM

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

3.0

Non-repetitive Peak Forward Surge Current 8.3 ms

Single Half-Sine-Wave

IFSM

Power Dissipation

DO-201D

3.12

SOD-123

0.62

SOD-323

0.25

SMA/SMB/SMC

1.315

Junction Temperature

+125

°C

Storage Temperature

TSTG

-65 ~ +125

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. These ratings are limiting values above which the serviceability of any semiconductor device may be

impaired.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

DO-201D

θJA

°C/W

SOD-123

200

SOD-323

500

SMA/SMB/SMC



ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Reverse Breakdown Voltage (Note 1)

V(BR)R

IR=0.50mA

Forward Voltage Drop (Note 3)

VFM

IF=3.0A, TJ=25°C

0.50

IF=3.0A, TJ=100°C

0.45

Leakage Current (Note 1)

IRM

VR=40V, TJ=25°C

500

μA

VR=40V, TJ=100°C

Notes: 1. Short duration pulse test used to minimize self-heating effect.

2. Thermal resistance junction to case mounted on heatsink.

3. Pulse width ≤300μs, duty cycle ≤2%.

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