6N70K-MTQ

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R205-051.B

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

700

V

Gate-Source Voltage (Note 2)

±30

V

6

A

Drain Current

Pulsed

24

A

Avalanche Current (Note 2)

6

A

Avalanche Energy

Single Pulsed (Note 3)

75

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

2.5

V/ns

TO-220

125

TO-220F/TO-220F1

TO-220F2/TO-220F3

42

Power Dissipation

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

55

W

TO-220

1

TO-220F

0.32

TO-220F1/TO-220F2

TO-220F3

0.336

Linear Derarting Factor

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

0.44

W/°C

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220F3

62.5

Junction to Ambient

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

110

°С/W

TO-220

3.1

TO-220F

1.0

TO-220F1/TO-220F2

TO-220F3

2.9

Junction to Case

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

2.27

°С/W