LM20343_15 datasheet(3/29 Pages) TI

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LM20343

www.ti.com

SNVS559B – MAY 2008 – REVISED APRIL 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

VIN to GND

-0.3V to +38V

BOOT to GND

-0.3V to +43V

BOOT to SW

-0.3V to +7V

SW to GND

-0.5V to +38V

SW to GND (Transient)

-1.5V (< 20 ns)

FB, EN, SS/TRK, RT, PGOOD to GND

-0.3V to +6V

VCC to GND

-0.3V to +8V

Storage Temperature

-65°C to 150°C

ESD Rating

Human Body Model(3)

2kV

(1)

Absolute Maximum Ratings indicate limits beyond witch damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test

conditions, see the Electrical Characteristics.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(3)

The human body model is a 100 pF capacitor discharged through a 1.5 k

Ω resistor to each pin.

Operating Ratings

VIN to GND

+4.5V to +36V

Junction Temperature

−40°C to + 125°C

Electrical Characteristics

Unless otherwise stated, the following conditions apply: VVIN = 12V. Limits in standard type are for TJ = 25°C only, limits in

bold face type apply over the junction temperature (TJ) range of -40°C to +125°C. Minimum and Maximum limits are

specified through test, design, or statistical correlation. Typical values represent the most likely parametric norm at

TJ = 25°C, and are provided for reference purposes only.

Symbol

Parameter

Conditions

Min

Typ

Max

Units

VFB

Feedback Pin Voltage

VVIN = 4.5V to 36V

0.788

0.8

0.812

RHSW-DS(ON)

High-Side MOSFET On-Resistance

ISW = 3A

130

225

Ω

RLSW-DS(ON)

Low-Side MOSFET On-Resistance

ISW = 3A

110

190

Ω

Operating Quiescent Current

VVIN = 4.5V to 36V

2.3

ISD

Shutdown Quiescent Current

VEN = 0V

150

180

µA

VUVLO

VIN Under Voltage Lockout

Rising VVIN

4.25

4.5

VUVLO(HYS)

VIN Under Voltage Lockout Hysteresis

350

450

VVCC

VCC Voltage

IVCC = -5 mA, VEN = 5V

5.5

ISS

Soft-Start Pin Source Current

VSS = 0V

µA

VTRKACC

Soft-Start/Track Pin Accuracy

VSS = 0.4V

-10

IBOOT

BOOT Diode Leakage

VBOOT = 4V

VF-BOOT

BOOT Diode Forward Voltage

IBOOT = -100 mA

0.9

1.1

Powergood

VFB(OVP)

Over Voltage Protection Rising Threshold

VFB(OVP) / VFB

107

110

112

VFB(OVP-HYS)

Over Voltage Protection Hysteresis

ΔVFB(OVP) / VFB

VFB(PG)

PGOOD Threshold, VOUT Rising

VFB(PG) / VFB

VFB(PG-HYS)

PGOOD Hysteresis

ΔVFB(PG) / VFB

TPGOOD

PGOOD Delay

µs

IPGOOD(SNK)

PGOOD Low Sink Current

VPGOOD = 0.5V

0.6

IPGOOD(SRC)

PGOOD High Leakage Current

VPGOOD = 5V

200

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