2N65KL-TND-R datasheet(4/7 Pages) UTC

4 / 7 page

2N65K-TA

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R205-041.A



ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

650

Drain-Source Leakage Current

IDSS

VDS = 650V, VGS = 0V

μA

Gate-Source Leakage Current

Forward

IGSS

VGS = 30V, VDS = 0V

100

Reverse

VGS = -30V, VDS = 0V

-100

Breakdown Voltage Temperature Coefficient △BVDSS △

/TJ ID=250μA, Referenced to 25°C

0.4

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

3.0

5.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID =1A

5.2

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS =25V, VGS =0V, f =1MHz

200

290

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD (ON)

VDD =30V, ID =0.5A,RG=25Ω

(Note 1, 2)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

Total Gate Charge

VDS=50V, VGS=1.0V, ID=1.3A

(Note 1, 2)

Gate-Source Charge

QGS

Gate-Drain Charge

QGD

1.2

DRAIN-SOURCE DIODE CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, ISD = 2.0 A

1.4

Continuous Drain-Source Current

ISD

2.0

Pulsed Drain-Source Current

ISM

8.0

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

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