2N65K-TA

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

7 of 7

www.unisonic.com.tw

QW-R205-041.A



TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source

Breakdown Voltage

1

0

Drain Current vs. Gate Threshold Voltage

3

4

6

25

0

50

100

150

200

250

300

0

150

450

600

750

300

0

50

100

150

200

250

300

Drain-Source On-State Resistance

Characteristics

0

0.4

1.0

01

2

3

4

0.2

0.6

0.8

1.2

6

0

Drain-Source Diode Forword Current vs.

Source to Drain Voltage

0.2

0.4

0.6

0.8

1.0

0

0.4

0.8

1.2

1.6

2.0

5

2.4

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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

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and reliable and may be changed without notice.