10N65-C datasheet(3/6 Pages) UTC

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10N65-C

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-A79.a



ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID= 250μA

650

Drain-Source Leakage Current

IDSS

VDS=650V, VGS=0V

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=30V, VDS=0V

100

Reverse

VGS=-30V, VDS=0V

-100

Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250 µA, Referenced to 25°C

0.7

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=4.75A

0.60 0.80

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1.0 MHz

1520 1750 pF

Output Capacitance

COSS

160

210

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD=30V, ID=0.5A, RG=25Ω

(Note1, 2)

120

Turn-On Rise Time

128

160

Turn-Off Delay Time

tD(OFF)

228

260

Turn-Off Fall Time

115

130

Total Gate Charge

VDS=50V, ID=1.3A, VGS=10V

(Note1, 2)

Gate-Source Charge

QGS

Gate-Drain Charge

QGD

8.8

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS=0V, IS=10A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

trr

VGS=0V, IS=10A,

dIF/dt=100A/µs (Note1)

420

Reverse Recovery Charge

QRR

4.2

µC

Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

2. Essentially independent of operating temperature

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