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4N80L-TN3-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças 4N80L-TN3-R
Descrição Electrónicos  N-CHANNEL POWER MOSFET
PDF  6 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

4N80L-TN3-R Folha de dados(HTML) 2 Page - Unisonic Technologies

  4N80L-TN3-R Datasheet HTML 1Page - Unisonic Technologies 4N80L-TN3-R Datasheet HTML 2Page - Unisonic Technologies 4N80L-TN3-R Datasheet HTML 3Page - Unisonic Technologies 4N80L-TN3-R Datasheet HTML 4Page - Unisonic Technologies 4N80L-TN3-R Datasheet HTML 5Page - Unisonic Technologies 4N80L-TN3-R Datasheet HTML 6Page - Unisonic Technologies  
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4N80-N
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-A96.A
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous
ID
4.0
A
Pulsed (Note 2)
IDM
16
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
250
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
Power Dissipation
PD
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=31.25mH, IAS=4A, VDD= 50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
110
°C/W
Junction to Case
θJC
2.5
°C/W



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