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UT4232G-S08-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças UT4232G-S08-R
Descrição Electrónicos  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  3 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT4232G-S08-R Folha de dados(HTML) 2 Page - Unisonic Technologies

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UT4232
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-337.b
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Ta=25°C)(Note 2)
ID
7.8
A
Pulsed Drain Current (Note 3)
IDM
30
A
Power Dissipation (Ta=25°C)
Derate above Ta>25°C
PD
2
W
0.016
W/°C
Junction Temperature
TJ
+150
°C
Junction and Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface mounted on 1 in
2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on min.
3. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient
θJA
62.5
°C/W
Note: Surface mounted on 1 in
2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on min
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=250 µA
30
V
Breakdown
Voltage
Temperature
Coefficient
∆BVDSS/∆TJ Reference to 25°C,ID=1mA
0.02
V/°C
Drain-Source Leakage Current
IDSS
VDS=30 V,VGS=0 V
1
µA
Gate-Source Leakage Current
IGSS
VGS=±20 V, VDS=0 V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VD S= VGS, ID=250 µA
1
3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10 V, ID=7 A
22
mΩ
VGS=4.5 V, ID=5 A
32
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0 V, f=1MHz
720
1150
pF
Output Capacitance
COSS
230
pF
Reverse Transfer Capacitance
CRSS
200
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VGS=10V,VDS=15V, RD=15Ω,
RG=3.3Ω, ID=1 A
10
ns
Turn-ON Rise Time
tR
7
ns
Turn-OFF Delay Time
tD(OFF)
22
ns
Turn-OFF Fall-Time
tF
8
ns
Total Gate Charge
QG
VGS=4.5 V, VDS=24 V, ID=7 A
13
21
nC
Gate Source Charge
QGS
3
nC
Gate Drain Charge
QGD
9
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1.7 A, VGS=0 V
1.2
V
Reverse Recovery Time
tRR
IS=7 A, VGS=0 V, dI/dt=100A/μs
16
ns
Reverse Recovery Charge
QRR
8
nC



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