7N80G-TQ2-R datasheet(3/7 Pages) UTC

3 / 7 page

7N80

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-523.H



ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

800

Gate-Source Voltage

VGSS

±30

Drain Current

Continuous

Pulsed (Note 2)

IDM

26.4

Avalanche Energy

Single Pulsed (Note 3)

EAS

670

Repetitive (Note 2)

EAR

16.7

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220 /TO-263

142

TO-220F/ TO-220F1

TO-220F3

TO-220F2

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=27.5mH, IAS=7A, VDD= 50V, RG=25Ω, Starting TJ=25°C

4. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

62.5

°C/W

Junction to Case

TO-220 /TO-263

θJC

0.88

°C/W

TO-220F/ TO-220F1

TO-220F3

2.4

TO-220F2

2.31

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