4N65

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 9

www.unisonic.com.tw

QW-R502-397.N



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note2)

4.4

A

Continuous

4.0

A

Drain Current

Pulsed (Note2)

16

A

Single Pulsed (Note3)

260

mJ

Avalanche Energy

Repetitive (Note2)

10.6

mJ

Peak Diode Recovery dv/dt (Note4)

dv/dt

4.5

V/ns

TO-220/TO-262/TO-263

106

W

TO-220F/TO-220F1

TO-220F3

35

W

TO-220F2

36

W

TO-251/ TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

50

W

Power Dissipation

DFN-8(5×6)

30

W

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.



THERMAL DATA

PARAMETER

PACKAGE

SYMBOL

RATINGS

UNIT

TO-220/TO-262/TO-263

TO-220F/TO-220F1

TO-220F2/TO-220F3

62.5

°С/W

TO-251/ TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

110

°С/W

Junction to Ambient

DFN-8(5×6)

75

°С/W

TO-220/TO-262/TO-263

1.18

°С/W

TO-220F/TO-220F1

TO-220F3

3.5

°С/W

TO-220F2

3.4

°С/W

TO-251/ TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

2.5

°С/W

Junction to Case

DFN-8(5×6)

4.17

°С/W