4N70G-TN3-R datasheet(3/7 Pages) UTC

3 / 7 page

4N70

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-340.G



ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

700

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

4.4

Drain Current

Continuous

4.4

Pulsed (Note 2)

IDM

17.6

Avalanche Energy

Single Pulsed (Note 3)

EAS

260

Repetitive (Note 2)

EAR

10.6

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220/TO-262

106

TO-220F/TO-220F1

TO-251/ TO-252

Junction Temperature

+150

°С

Operating Temperature

TOPR

-55 ~ +150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 26.9mH, IAS = 4.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD≤ 4.4A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F

TO-220F1/TO-262

θJA

62.5

°С/W

TO-251/ TO-252

110

Junction to Case

TO-220/TO-262

θJC

1.18

°С/W

TO-220F/TO-220F1

3.47

TO-251/ TO-252

2.55

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