UT2306

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-130.E



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

3.5

A

Pulsed Drain Current (Note 1, 2)

14

A

Power Dissipation

0.83

W

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

150

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

μA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

1.5

2

V

Drain-Source On-State Resistance (Note 2)

42

65

mΩ

70

90

DYNAMIC CHARACTERISTICS

Input Capacitance

400

pF

Output Capacitance

80

pF

Reverse Transfer Capacitance

45

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time

10

19

ns

Turn-ON Rise Time

8

15

ns

Turn-OFF Delay Time

19

35

ns

Turn-OFF Fall Time

6.2

12

ns

Total Gate Charge

12.5

16

nC

Gate-Source Charge

2.4

nC

Gate-Drain Charge

1.3

nC

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

0.8

1.3

V

Maximum Continuous Drain-Source Diode

Forward Current

1.3

A

2. Pulse width ≤300us, duty cycle ≤2%.

3. Surface mounted on FR4 board t≦10sec.